Lantarki masu sassauƙa suna wakiltar sauyi daga tsarin silicon mai tauri, wanda buƙatar na'urori masu sawa, daidaitawa, da sauƙi ke motsawa. Matsala mai mahimmanci ita ce kayan haɗin kai na lantarki. Duk da yake Indium Tin Oxide (ITO) ya yadu, rashin ƙarfin sa da ƙarancin indium manyan iyakoki ne. Wannan binciken ya gabatar da madadin da ke jan hankali: tsarin nanonetwork na Platinum (Pt) masu haɗin kai a lantarki da aka kera akan allunan polyimide (PI) masu sassauƙa. Babban ƙirƙira yana cikin sauƙaƙan tsarin sarrafa yanayi wanda ke haifar da rarrabuwar tsarin nano a cikin fim ɗin gawa na Platinum-Cerium (Pt-Ce) da aka sanya, yana samar da cibiyar sadarwa ta Pt a cikin matrix na CeO₂ mai keɓancewa. Wannan tsari yana yi wa alƙawarin mafi girman sassauƙi na injina da kwanciyar hankali na lantarki a ƙarƙashin lanƙwasa mai maimaitawa.
Kera yana ƙetare lithography mai rikitarwa, yana ba da hanya mai yuwuwar ma'auni.
An shirya allon polyimide (PI) mai tsabta. An sanya fim mai bakin ciki (~50 nm) na gawa na Platinum-Cerium (Pt-Ce) daidai gwargwado a saman PI. Takamaiman abun da ke ciki da hanyar sanyawa (misali, sputtering) mahimman sigogi ne na farko waɗanda ke ƙayyade ƙirar nano na ƙarshe.
Muhimmin mataki ya haɗa da dumama samfurin Pt-Ce/PI a cikin yanayi mai sarrafawa wanda ya ƙunshi Carbon Monoxide (CO) da Oxygen (O₂). Wannan jiyya yana haifar da amsawar ƙasa mai ƙarfi da rarrabuwar tsarin nano. An zaɓi Cerium (Ce) don yin oxidize don samar da ɓangarorin Cerium Dioxide (CeO₂) masu keɓancewa. A lokaci guda, atom ɗin Platinum (Pt) suna haɗuwa don samar da ci gaba da ci gaba, tsarin nanonetwork mai haɗin kai a lantarki da ke kewaye da tsibiran CeO₂. Zazzabi da tsawon lokacin wannan jiyya mahimman sigogi ne na sarrafawa.
Microscopy yana bayyana ƙirar nano. Nasara jiyya yana haifar da ci gaba da ci gaba, cibiyar sadarwa mai kama da yanar gizo na Pt (wanda ke bayyana haske a cikin SEM). Yanayin da ya gaza (misali, yawan zafin jiki/lokaci) yana haifar da tsibiran nano na Pt waɗanda aka keɓe daga juna, an saka su a cikin matrix na CeO₂.
Tsarin nanonetwork na Pt masu haɗin kai suna nuna kwanciyar hankali mai ban mamaki. Juriya na takarda ya kasance kusan akai a ~2.76 kΩ/sq ko da bayan zagaye 1000 na lanƙwasa a diamita daban-daban har zuwa 1.5 mm. Wannan yana nuna ƙaramin samuwar micro-crack, wanda shine yanayin gazawa na yau da kullun a cikin ITO.
Binciken LCR yana ba da sa hannu na lantarki mai ban sha'awa. Tsarin nanonetwork mai haɗin kai yana nuna amsa mai kama da inductor, yana nuna hanyar lantarki mai ci gaba tare da inductance mai alaƙa. Akasin haka, tsibiran nano da aka cire haɗin kai suna nuna halayyar mai kama da capacitor, kamar yadda ake tsammani don ɓangarorin lantarki masu keɓewa waɗanda aka raba ta hanyar dielectric mai keɓancewa (CeO₂). Wannan yana aiki azaman binciken lantarki kai tsaye na ƙananan tsari.
Samuwar tsarin nanonetwork yana ƙarƙashin ƙa'idodin motsi da thermodynamics. Ana iya fassara tsarin ta amfani da zanen canjin lokaci-zazzabi (TTT) don tsarin gawa na Pt-Ce a ƙarƙashin takamaiman yanayin iskar gas mai amsawa.
Ƙarfin motsin amsa shine oxidation na Ce: $\text{Ce} + \text{O}_2 \rightarrow \text{CeO}_2$. Matsayin CO yana yiwuwa a matsayin wakili mai ragewa don hana oxidation na Pt da/ko don gyara ƙarfin saman don haɓaka yanayin da ake so.
Fahimtar Tushe: Wannan ba sabon abu kawai bane; yana da wayo hanyar sarrafa kayan aiki. Masu bincike sun sake amfani da wani abu na ƙarfe—rarrabuwar tsarin nano wanda zaɓaɓɓen oxidation ke motsa shi—zuwa kayan aikin ƙira mai mataki ɗaya, mara lithography don masu gudanar da sassauƙa. Gaskiyar hazaka ita ce amfani da ma'aunin LCR a matsayin wakili mai sauƙi, mara lalacewa don haɗin kai na tsari, wata dabara da masana'antar lantarki masu sassauƙa ya kamata su lura.
Kwararar Hankali: Hankali yana da kyau: 1) ITO yana da rauni da ƙarancin abu → buƙatar madadin tushen ƙarfe. 2) Lithography na ƙarfe yana da rikitarwa → buƙatar tsarin haɗin kai. 3) Gawa + zaɓaɓɓen amsa = ƙira a cikin wuri. 4) Haɗin kai komai ne → auna shi ta hanyar lantarki (LCR). Binciken yana tsara taga tsarin a hankali, yana mai da kallo zuwa girke-girke mai maimaitawa.
Ƙarfi & Kurakurai: Ƙarfin ba shakka ne: sauƙi, yuwuwar ma'auni, da juriya na musamman na lanƙwasa. Duk da haka, juriya na takarda (~2.76 kΩ/sq), shine ƙafar Achilles ɗinsa. Yana da matakan girma sama da ITO (~10-100 Ω/sq) ko ma sauran raga na ƙarfe. Wannan yana iyakance shi ga aikace-aikacen da ba sa buƙatar babban lantarki ko ƙananan asarar haɗin kai, kamar wasu na'urori masu auna firikwensin ko electrodes, amma yana hana nunin allo mai ƙima ko transistors masu sauri. Dogaro akan Platinum, ƙarfe mai daraja, shima yana tayar da damuwa game da farashi don samarwa mai yawa, ko da yake bakin ciki na bakin ciki yana rage wannan kaɗan.
Fahimta Mai Aiki: Ga ƙungiyoyin R&D: Mayar da hankali ga injiniyan gawa. Shin za mu iya maye gurbin Pt da tsarin Pd-Ag ko Au-Cu don daidaita farashi da gudanarwa? Shin za a iya cire CeO₂ don ƙirƙirar cibiyar sadarwar iska ta Pt mai tsabta, wanda zai iya rage juriya? Ga masu haɓaka samfur: Wannan fasaha ta cika don aikace-aikacen da ba a saba gani ba, masu sassauƙa inda gudanarwa ke biyo bayan amincin—tunanin electrodes na bio da za a saka ko na'urori masu auna firikwensin mai sassauƙa a cikin yanayi mai tsanani. Kada ku yi ƙoƙarin maye gurbin ITO a cikin nunin allo tukuna; maimakon haka, ku fara kasuwanni inda ITO ta gaza gaba ɗaya.
Wannan aikin ya yi daidai da babban yanayin amfani da haɗin kai da rarrabuwar tsari don ƙirƙirar nano, mai kama da dabarun da ake amfani da su a cikin lithography na copolymer block ko dealloying don ƙirƙirar ƙarfe na nanoporous. Gudunmawar sa shine a amfani da wannan ƙa'ida musamman ga ƙalubalen lantarki masu sassauƙa tare da daidaitaccen tsari-tsari-dangi.
Tsarin don Kimanta Sabbin Masu Gudanar da Sassauƙa:
Misalin Lamari – Binciken Aikace-aikace:
Yanayi: Kamfani yana buƙatar electrode mai sassauƙa don sabon na'urar auna glucose mai ci gaba wanda dole ne ya jure lalacewar fata na kwanaki 7.
Bincike:
Aikace-aikace na Kusa (shekaru 3-5):
Hanyoyin Bincike & Ci Gaba: